RJK60S5DPK-M0#T0 Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: MOSFET N-CH 600V 20A TO3PSG
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
Supplier Device Package: TO-3PSG
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 69537 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 1105.03 грн |
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Технічний опис RJK60S5DPK-M0#T0 Renesas Electronics Corporation
Description: MOSFET N-CH 600V 20A TO3PSG, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V, Supplier Device Package: TO-3PSG, Part Status: Obsolete, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V.