QSL10TR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS GP BJT NPN 12V 1.5A 5-PIN
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Supplier Device Package: TSMT5
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 900 mW
Description: TRANS GP BJT NPN 12V 1.5A 5-PIN
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Supplier Device Package: TSMT5
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 900 mW
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Технічний опис QSL10TR Rohm Semiconductor
Description: TRANS GP BJT NPN 12V 1.5A 5-PIN, Packaging: Tape & Reel (TR), Package / Case: SOT-23-5 Thin, TSOT-23-5, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V, Supplier Device Package: TSMT5, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 900 mW.