MIW75N65AH2Y-BP Micro Commercial Co
Виробник: Micro Commercial Co
Description: IGBT DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/143ns
Switching Energy: 3.26mJ (on), 840µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 428 W
Description: IGBT DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/143ns
Switching Energy: 3.26mJ (on), 840µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 428 W
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Технічний опис MIW75N65AH2Y-BP Micro Commercial Co
Description: IGBT DISCRETE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 160 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A, Supplier Device Package: TO-247AB, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/143ns, Switching Energy: 3.26mJ (on), 840µJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 170 nC, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 428 W.