GE12047CCA3 GE Aerospace
Виробник: GE AerospaceDescription: SIC 2N-CH 1200V 475A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (Tc)
Technology: Silicon Carbide (SiC)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Supplier Device Package: Module
Part Status: Active
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 75979.38 грн |
| 10+ | 68924.69 грн |
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Технічний опис GE12047CCA3 GE Aerospace
Description: SIC 2N-CH 1200V 475A MODULE, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (Tc), Technology: Silicon Carbide (SiC), Power - Max: 1250W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 475A, Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V, Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V, Vgs(th) (Max) @ Id: 4.5V @ 160mA, Supplier Device Package: Module, Part Status: Active.