AM4417P-CT Analog Power Inc.
Виробник: Analog Power Inc.Description: MOSFET P-CH -60V 11.1A SOIC-8
Packaging: Strip
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: -1V @ -250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): -60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ -4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9258 pF @ -15 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 50.02 грн |
| 10+ | 32.28 грн |
| 100+ | 29.08 грн |
| 500+ | 21.22 грн |
| 1000+ | 17.43 грн |
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Технічний опис AM4417P-CT Analog Power Inc.
Description: MOSFET P-CH -60V 11.1A SOIC-8, Packaging: Strip, Package / Case: SOIC-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 7.2A, 4.5V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: -1V @ -250µA, Supplier Device Package: SOIC-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): -60 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ -4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 9258 pF @ -15 V.